Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Reexamination Certificate
2005-02-22
2005-02-22
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming base region of specified dopant concentration profile
C438S309000, C438S343000, C438S356000, C438S478000, C438S481000, C438S912000, C438S965000
Reexamination Certificate
active
06858510
ABSTRACT:
A method of making a bi-directional transient voltage suppression device is provided, which comprises: (a) providing a p-type semiconductor substrate; (b) epitaxially depositing a lower semiconductor layer of p-type conductivity; (c) epitaxially depositing a middle semiconductor layer of n-type conductivity over the lower layer; (d) epitaxially depositing an upper semiconductor layer of p-type conductivity over the middle layer; (e) heating the substrate, the lower epitaxial layer, the middle epitaxial layer and the upper epitaxial layer; (f) etching a mesa trench that extends through the upper layer, through the middle layer and through at least a portion of the lower layer, such that the mesa trench defines an active area for the device; and (g) thermally growing an oxide layer on at least those portions of the walls of the mesa trench that correspond to the upper and lower junctions of the device.
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Einthoven Willem G.
Ginty Anthony
Walsh Aidan
Bonham, Esq. David B.
General Semiconductor Inc.
Guerrero Maria F.
Meyer Fortkort & Williams, PC
Williams Esq. Karin L.
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