Hybrid molecular memory devices and methods of use thereof

Details Hybrid molecular memory devices and methods of use thereof Hybrid molecular memory devices and methods of use thereof

2005-10-25

2005-10-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C427S384000, C429S213000

Reexamination Certificate

active

06958485

ABSTRACT:
The present invention provides hybrid microelectronic memory device, comprising: (a) a substrate having a surface, a first region of first work function adjacent the surface, and a second region of second work function adjacent the surface and adjacent the first region; (b) a film comprising redox-active molecules on the first and second regions; and (c) an electrode connected to the film. The present invention further provides a hybrid microelectronic memory device, comprising: (a) a substrate having surface and a structure or region such as a diode for increasing the retention time of the device formed adjacent the surface; (b) a film comprising redox-active molecules on or associated with the region or structure; and (c) an electrode connected to the redox active molecules opposite the substrate surface. Methods of using such devices are also described.

REFERENCES:
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6208553 (2001-03-01), Gryko et al.
patent: 6212093 (2001-04-01), Lindsey
patent: 6451942 (2002-09-01), Li et al.
patent: 2005/0019500 (2005-01-01), Bocian et al.
U.S. Appl. No. 10/628,868, filed Jul. 28, 2003, Bocian et al.
Gowda et al.,Hybrid Silicon/Molecular Memories: Co-Engineering for Novel Functionality(2003).

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