Method of fabricating long-wavelength VCSEL and apparatus

Details Method of fabricating long-wavelength VCSEL and apparatus Method of fabricating long-wavelength VCSEL and apparatus

2005-02-08

2005-02-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C372S036000

Reexamination Certificate

active

06852557

ABSTRACT:
A long-wavelength VCSEL, and method of fabrication, includes a long-wavelength active region epitaxially grown on a compatible substrate with a high heat conductivity DBR mirror stack metamorphically grown on the active region. A supporting substrate is bonded to the DBR mirror stack and the compatible substrate is removed. A second mirror stack, either a DBR or a dielectric mirror stack, is formed on the opposite surface of the active region. Preferably, an InP based active region is grown on an InP based substrate and an AlAs/GaAs based metamorphic DBR mirror stack is metamorphically grown on the active region. The supporting substrate may be either an InP based substrate bonded to the active region or a layer of plated metal, such as copper, silver, gold, nickel, aluminum, etc.

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