Using scatterometry to detect and control undercut for ARC...

Details Using scatterometry to detect and control undercut for ARC... Using scatterometry to detect and control undercut for ARC...

2005-12-06

2005-12-06

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Reexamination Certificate

active

06972201

ABSTRACT:
Architecture for monitoring a bottom anti-reflective coating (BARC) undercut and residual portions thereof during a development stage using scatterometry. The scatterometry system monitors for BARC undercut and residual BARC material, and if detected, controls the process to minimize such effects in subsequent wafers. If one or more of such effects has exceeded a predetermined limit, the wafer is rerouted for further processing, which can include rework, etch back of the affected layer, or rejection of the wafer, for example.

REFERENCES:
patent: 5739909 (1998-04-01), Blayo et al.
patent: 6433878 (2002-08-01), Niu et al.
patent: 6558965 (2003-05-01), Singh et al.
patent: 6762133 (2004-07-01), Rangarajan et al.
patent: 2003/0000922 (2003-01-01), Subramanian et al.
patent: 2005/0022932 (2005-02-01), Kagoshima et al.

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