SiC material, semiconductor processing equipment and method...

Details SiC material, semiconductor processing equipment and method... SiC material, semiconductor processing equipment and method...

2005-08-30

2005-08-30

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S101000, C117S951000, C501S087000, C501S088000

Reexamination Certificate

active

06936102

ABSTRACT:
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-SiC csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the β-Sic crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

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