Thin-film transistor and method for making the same

Details Thin-film transistor and method for making the same Thin-film transistor and method for making the same

2005-10-04

2005-10-04

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S066000, C257S070000, C257S072000, C257S075000

Reexamination Certificate

active

06952021

ABSTRACT:
A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

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