Semiconductor device

Details Semiconductor device Semiconductor device

2005-10-18

2005-10-18

Abraham, Fetum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material containing...

C257S059000, C257S072000

Reexamination Certificate

active

06956235

ABSTRACT:
The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.

REFERENCES:
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4987005 (1991-01-01), Suzuki et al.
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5304407 (1994-04-01), Hayashi et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5686980 (1997-11-01), Hirayama et al.
patent: 5904567 (1999-05-01), Yamazaki
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 5977560 (1999-11-01), Banerjee et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6107639 (2000-08-01), Yamazaki et al.
patent: 6107654 (2000-08-01), Yamazaki
patent: 6130118 (2000-10-01), Yamazaki
patent: 6180957 (2001-01-01), Miyasaka et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6307220 (2001-10-01), Yamazaki
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 2001/0014535 (2001-08-01), Yamazaki
patent: 2002/0008286 (2002-01-01), Yamazaki et al.
patent: 2002/0014625 (2002-02-01), Asami et al.
patent: 2002/0038889 (2002-04-01), Yamazaki et al.
patent: 2002/0043662 (2002-04-01), Yamazaki et al.
patent: 0 984 317 (2000-03-01), None
patent: 02-219234 (1990-08-01), None
patent: 04-349619 (1992-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-078329 (1996-03-01), None
patent: 11-204434 (1999-07-01), None
patent: 11-284198 (1999-10-01), None
patent: 11-307783 (1999-11-01), None
patent: 11-345767 (1999-12-01), None
patent: 251379 (1995-07-01), None
patent: 310478 (1997-07-01), None
AM-LCD 99—Jul. 14-16, 1999 Kogakuin University, Tokyo Japan; “Microtexture Analysis of Location Controlled Large Si Grain Formed by Excimer-Laser Crystallization Method” R. Ishihara et al.; pp. 99-102.
IEEE Electron Device Letters, pp. 160-162; vol. 17, No. 4, Apr. 1996 “Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization” Seok-Woon Lee et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3488714