Method of manufacturing electronic device

Details Method of manufacturing electronic device Method of manufacturing electronic device

2005-11-01

2005-11-01

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S723000, C438S725000, C134S001200

Reexamination Certificate

active

06960531

ABSTRACT:
After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.

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S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. L pp. 555-556, 569 and 575.

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