Microwave phase shifter having an active layer under the...

Details Microwave phase shifter having an active layer under the... Microwave phase shifter having an active layer under the...

2005-11-15

2005-11-15

Lee, Benny (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

C333S164000

Reexamination Certificate

active

06965269

ABSTRACT:
A phase shifter according to this invention includes a circuit board having a semi-insulating layer. An active layer is formed in a transmission line forming portion on one surface side of the semi-insulating layer, a first ground conductive layer is formed on the other surface side, a transmission line is formed on the upper side of the active layer, and a second ground conductive layer is formed on the transmission line forming surface of the semi-insulating layer in close proximity to one side of the transmission line. If a bias voltage of negative polarity is applied to the transmission line, reverse bias is applied to the active layer to form a depletion layer and capacitance is equivalently connected to the transmission line having inductance. A phase shift amount can be freely controlled by changing the value of the capacitance according to the bias voltage.

REFERENCES:
patent: 3560891 (1971-02-01), MacLeay et al.
patent: 4630011 (1986-12-01), Neidert et al.
patent: 5083100 (1992-01-01), Hawkins et al.
patent: 5576671 (1996-11-01), Agar et al.
patent: 5777531 (1998-07-01), Tran et al.
patent: 2-241103 (1990-09-01), None
patent: 8-8660 (1996-01-01), None
patent: 11-176989 (1999-07-01), None
patent: 2001-119204 (2001-04-01), None

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