Stabilizers to inhibit the polymerization of substituted...

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From silicon reactant having at least one...

Reexamination Certificate

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C556S451000, C556S460000, C524S588000

Reexamination Certificate

active

06858697

ABSTRACT:
The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

REFERENCES:
patent: 2837550 (1958-06-01), Prober
patent: 3344111 (1967-09-01), Chalk
patent: 3882083 (1975-05-01), Berger et al.
patent: 3998865 (1976-12-01), Siciliano et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5118735 (1992-06-01), Burnier
patent: 5380812 (1995-01-01), Lutz et al.
patent: 5548006 (1996-08-01), Hirabayashi et al.
patent: 6368359 (2002-04-01), Perry et al.
patent: 20040039219 (2004-02-01), Chen et al.
patent: 7145179 (1999-08-01), None
English language translation JP 07-145179.*
JP 07 145179 A: Patent Abstracts of Japan, vol. 1995, No. 09, Oct. 31, 1995.
XP-002233220: Derwent Publications Ltd., London, GB, AN 1980-10616C.
XP-002233221: Derwent Publications Ltd., London, GB, AN 1997-72075Y.
“User's Guide For: Glass Deposition With Teos,” Dr. Arthur K. Hochberg, Schumacher, 1992.
Extrema® TOMCATS®, (Tetramethylcyclotetrasiloxane) Schumacher, 2000.
“Modeling of Low-Pressure Deposition of SiO2by Decomposition . . . ,” Huppertz, et al, Schumacher, 1979.
“The Deposition of Silicon Dioxide Films at Reduced Pressure,” Adams, et al, J. Electrochem Soc. 1979.
“Preparation of Device-quality SiO2Thin Films by Remote . . . ,” G. Lucovsky, Adv. Mat. Optics . . . 1996.
“Deposition of Silicon Oxide Films From TEOS By Low . . . ” G. Tochitani, et al, J. Vac. Sci. Tech. A, 1993.
“Properties of Silicon Dioxide Films Deposited at Low . . . ,” S K. Ray, et al, J. Vac. Sci. Tech. B, 1992.
“Electron Cyclotron Resonance Microwave Discharge for Oxide . . . ,” J. Electrochem Soc. 1992.
“Ion and Chemical Radical Effects on the Step Coverage . . . ,” C.-P. Chang, et al. J. Appl. Phys. 67, 1990.
“Electron Cyclotron Resonance Microwave Discharge for Oxide . . . ,” C.S. Pai, et al, J. Appl. Phys. 1993.
“User's Guide For: Undoped Glass, PSG, and BPSG Using. ,” Schumacher, 1991.
“An Overview of the Polymerization of Cyclosiloxanes . . . ,” J.E. McGrath, et al, ACS Symp , 1983.

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