Methods for affirming switched status of MEMS-based devices

Details Methods for affirming switched status of MEMS-based devices Methods for affirming switched status of MEMS-based devices

2005-11-29

2005-11-29

Deb, Anjan (Department: 2858)

Electricity: measuring and testing

Electromechanical switching device

C324S763010

Reexamination Certificate

active

06969996

ABSTRACT:
A configuration is provided by which it may be determined whether a MEMS device is in a select state. The select state is defined by a position of a moveable element, which is moved with electrostatic forces upon activation of an electrode. The select state is detected with a sensing configuration that has first and second regions. The regions are generally separated such that they are electrically uncoupled unless the moveable element is in the position that defines the select state. A detector may be provided to indicate whether the first and second regions are coupled electrically.

REFERENCES:
patent: 5619061 (1997-04-01), Goldsmith et al.
patent: 5959760 (1999-09-01), Yamada et al.
patent: 6133807 (2000-10-01), Akiyama et al.
patent: 6240223 (2001-05-01), Glance
patent: 6426687 (2002-07-01), Osborn
patent: 6657832 (2003-12-01), Williams et al.
patent: 6750655 (2004-06-01), Staple et al.
patent: 2002/0094152 (2002-07-01), Feierabend et al.
patent: 2002/0106144 (2002-08-01), Garverick et al.
patent: 2003/0039016 (2003-02-01), Vaganov
Akiyama, Terunobu, et al., “Controlled Stepwise Motion in Polysilicon Microstructures,” Journal of Microelectromechanical Systems, vol. 2., No. 3, pp. 108-110, Sep. 1993.
Ashruf, C.M.A., et al., “Galvanic porous silicon formation without external contacts,” Sensors and Actuators 74, pp. 118-122, 1999.
Bean, Kenneth E., “Anisotropic Etching of Silicon,” IEEE Transactions on Electron Devices, vol. ED-25, No. 10, pp. 1185-1193, Oct. 1978.
Ciarlo, Dino R., “A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers,” IOP Publishing. Ltd., 1992.
Kaajakari, Ville, et al., “Ultrasonic Actuation for MEMS Dormancy-Related Stiction Reduction,” Proceedings of SPIE vol. 4180, 2000.
Koch, T., et al., “Anisotropically etched deep gratings for InP/InGasAsp Optical devices,” J. Appl. Phys. 62 (8), Oct. 1987.
Schilling, M., et al., “Deformation-free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy,” Appl. Phys. Letter 49 (12) Sep. 1986.
Tang, William C., et al., “Electrostratically Balanced Comb Drive for Controlled Levitation,” Technical Digest IEEE Solid-State Sensor and Actuator Workshop. pp. 23-27, Jun. 1990.
Torcheux, L., et al., “Electrochemical Coupling Effects on the Corrosion of Silicon Samples in HF Solutions,” J. Electrochem. Soc. vol. 142, No. 6, Jun. 1995.
Van Kessel, Peter F. et al, “A MEMS-Based Projection Display,” Proceedings of the IEEE, vol. 86, No. 8, pp. 1687-1704, Aug. 1998.
Muller, Lilac, “Gimballed Electrostatic Microactuators with Embedded Interconnects,” Dissertation, Spring 2000.
Keller, Christopher Guild, “Microfabricated Silicon High Aspect Ratio Flexures for in-Plane Motion,” Dissertation, Fall 1998.

Affiliated with

Also associated with

Rating

Methods for affirming switched status of MEMS-based devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for affirming switched status of MEMS-based devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for affirming switched status of MEMS-based devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3486048