Thin film transistor substrate and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S059000, C257S070000, C257S347000

Reexamination Certificate

active

06927418

ABSTRACT:
A thin film transistor substrate includes a transparent insulating substrate, a first thin film transistor that is formed on the transparent insulating substrate, and a second thin film transistor that is formed on the transparent insulating substrate. The second thin film transistor has a characteristic that differs from that of the first thin film transistor. An active layer of the first thin film transistor has a thickness greater than or equal to 50 nm, and an average crystal grain diameter greater than or equal to 1 μm. An active layer of the second thin film transistor has a thickness less than or equal to 60 nm, and an average crystal grain diameter less than 1 μm. The thin film transistor substrate is formed by conducting poly-crystallization through CW laser irradiation while controlling off time leak current generation and pressure resistance degradation.

REFERENCES:
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5811328 (1998-09-01), Zhang et al.
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6541823 (2003-04-01), Yoshiyama et al.
patent: 2004/0257486 (2004-12-01), Tai et al.
patent: 6-125084 (1994-05-01), None
patent: 11-284188 (1999-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film transistor substrate and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor substrate and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor substrate and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3484678

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.