Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-09
2005-08-09
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S070000, C257S347000
Reexamination Certificate
active
06927418
ABSTRACT:
A thin film transistor substrate includes a transparent insulating substrate, a first thin film transistor that is formed on the transparent insulating substrate, and a second thin film transistor that is formed on the transparent insulating substrate. The second thin film transistor has a characteristic that differs from that of the first thin film transistor. An active layer of the first thin film transistor has a thickness greater than or equal to 50 nm, and an average crystal grain diameter greater than or equal to 1 μm. An active layer of the second thin film transistor has a thickness less than or equal to 60 nm, and an average crystal grain diameter less than 1 μm. The thin film transistor substrate is formed by conducting poly-crystallization through CW laser irradiation while controlling off time leak current generation and pressure resistance degradation.
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Fujitsu Display Technologies Corporation
Greer Burns & Crain Ltd.
Quach T. N.
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