Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-30
2005-08-30
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290, C365S185220
Reexamination Certificate
active
06937524
ABSTRACT:
A non-volatile semiconductor memory device capable of performing page programming at high speeds is provided. This nonvolatile memory device includes a cell array with a matrix of rows and columns of electrically writable and erasable nonvolatile memory cells, and a write control circuit which writes or “programs” one-page data into this cell array at a plurality of addresses within one page. The write control circuit is operable to iteratively perform iteration of a write operation for the plurality of addresses corresponding to one page and iteration of a verify-read operation of the plurality of addresses after writing until verify-read check is passed with respect to every address involved. Regarding an address or addresses with no cells to be written any more, the write control circuit skips the write operation and the after-write verify-read operation.
REFERENCES:
patent: 5680347 (1997-10-01), Takeuchi et al.
patent: 5781478 (1998-07-01), Takeuchi et al.
patent: 5793696 (1998-08-01), Tanaka et al.
patent: 09-198882 (1997-07-01), None
patent: 2000-163976 (2000-06-01), None
Shiga Hitoshi
Tokiwa Naoya
Hogan & Hartson LLP
Yoha Connie C.
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