Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2005-12-06
2005-12-06
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S203000, C257S208000, C257S209000, C257S210000, C257S266000
Reexamination Certificate
active
06972444
ABSTRACT:
A wafer is formed with metal traces that extend a distance across the wafer on opposite sides of a saw street. The resistances of the metal traces, which can each be formed from one or more layers of metal, are measured before the saw street is cut. During and after the saw street is cut, the resistances of the metal traces are again measured, even continuously. The pre-cut, during-cut, and post-cut resistances are compared to determine if the wafer has been cut without damage to the wafer due to misalignment or a worn cutting device.
REFERENCES:
patent: 6630685 (2003-10-01), Lunde
patent: 6799976 (2004-10-01), Mok et al.
patent: 6809378 (2004-10-01), Byrd et al.
National Semiconductor Corporation
Pickering Mark C.
Tran Minhloan
Tran Tan
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