Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-29
2005-11-29
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S148000, C365S185050, C365S185180, C365S185230, C365S185240, C365S185280, C365S189050, C365S189070, C365S189090, C365S230060, C365S230080
Reexamination Certificate
active
06970385
ABSTRACT:
A resistor is connected to a source line of memory cells, a write-back operation is performed to memory cells on a single unit basis. With the resistor connected, there is suppressed, in a self-adjusting manner, channel leakage current flowing in a memory cell having a low threshold voltage in an over-erased state. There is assured an output voltage of a charge pump circuit supplying a drain voltage at a high potential necessary for forming a high electric field for generating sub-threshold CHE (Channel Hot Electron) in memory cells to be singly written back. As a result, a non-volatile semiconductor memory device can suppress a write back fault due to an increase in channel leakage current, in a self-selective write-back method using sub-threshold CHE.
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Ho Hoai
Leydig , Voit & Mayer, Ltd.
Pham Ly Duy
Renesas Technology Corp.
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