Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-12-06
2005-12-06
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C349S113000
Reexamination Certificate
active
06972432
ABSTRACT:
In a liquid crystal display, a metal layer forms a first light blocking layer having an opening that is shifted from gaps between adjacent reflective electrodes. Accordingly, light entering the gaps is blocked by the metal layer and does not directly reach lower layers. Between the reverses of the reflective electrodes and the surface of the light blocking layer made of the metal layer, light may be reflected multiple times and may leak through the opening of the light blocking layer toward lower layers than the metal layer. Such leakage of light is blocked by wiring regions that cover transistor diffusion regions, respectively. As a result, light is substantially completely blocked before reaching the diffusion regions, i.e., photosensitive regions of first and second transistors.
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patent: 6400426 (2002-06-01), Yamazaki et al.
patent: 6791521 (2004-09-01), Isami et al.
patent: 03-018892 (1991-01-01), None
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patent: WO 89/02144 (1989-03-01), None
Kang Gregory B.
Nath Gary M.
Nath & Associates PLLC
Nelms David
Tran Long
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