Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-12-27
2005-12-27
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S647000
Reexamination Certificate
active
06979878
ABSTRACT:
A method for isolating a first active region from a second active region, both of which are configured within a semiconductor substrate. The method comprises forming a dielectric masking layer above a semiconductor substrate. An opening is then formed through the masking layer. A pair of dielectric spacers are formed upon the sidewalls of the masking layer within the opening. A trench is then etched in the semiconductor substrate between the dielectric spacers. A first dielectric layer is then thermally grown on the walls and base of the trench. A CVD oxide is deposited into the trench and processed such that the upper surface of the CVD oxide is commensurate with the substrate surface. Portions of the spacers are also removed such that the thickness of the spacers is between about 0 to 200 Å. Silicon atoms and/or barrier atoms, such as nitrogen atoms, are then implanted ino regions of the active areas in close proximity to the trench isolation structure.
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Fulford H. Jim
Gardner Mark I.
Wristers Derick J.
Advanced Micro Devices , Inc.
Duy Mai Anh
Kowert Robert C.
Meyertons Hood Kivlin Kowert & Goetzel P.C.
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