Semiconductor device including ferroelectric capacitors and...

Details Semiconductor device including ferroelectric capacitors and... Semiconductor device including ferroelectric capacitors and...

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S003000, C438S240000

Reexamination Certificate

active

06974754

ABSTRACT:
An embodiment of the present invention is a method of fabricating a semiconductor device. The method comprises forming a film of bottom electrode material entirely over the dielectric film; etching the bottom electrode film to partially define a sidewall of each of bottom electrodes; forming a film of ferroelectric material on the remainder of the bottom electrode film and the exposed surface of the dielectric film; forming a film of top electrode material on the ferroelectric film; and etching the top electrode film, the ferroelectric film and the remainder of the bottom electrode film until the surface of the dielectric film is exposed to completely define the sidewall of each of the bottom electrodes.

REFERENCES:
patent: 6548343 (2003-04-01), Summerfelt et al.
patent: 6600183 (2003-07-01), Visokay et al.
patent: 6727156 (2004-04-01), Jung et al.
patent: 2001/0010377 (2001-08-01), Cuchiaro et al.
patent: 2001/0038115 (2001-11-01), Amanuma
patent: 11-317500 (1999-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device including ferroelectric capacitors and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including ferroelectric capacitors and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including ferroelectric capacitors and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3480757