Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S201000, C365S185180, C365S227000, C365S185240
Reexamination Certificate
active
06903976
ABSTRACT:
At the time of burn-in test, substrate voltages of transistors in a sense amplifier are switched by a PMOS substrate voltage generating portion and an NMOS substrate voltage generating portion. Specifically, the substrate voltage of a P channel MOS transistor is increased during the test than in a normal operation, whereas the substrate voltage of an N channel MOS transistor is decreased during the test than in the normal operation. Consequently, the threshold voltages of the P channel and N channel MOS transistors can be increased upon the test. Leakage currents in the turned-off states can be reduced, and thus, power consumption during the burn-in test can be decreased.
REFERENCES:
patent: 5633825 (1997-05-01), Sakuta et al.
patent: 5754418 (1998-05-01), Park et al.
patent: 5825705 (1998-10-01), Tsukude et al.
patent: 6031411 (2000-02-01), Tsay et al.
patent: 6222781 (2001-04-01), Matsumoto et al.
patent: 6239650 (2001-05-01), Tsay et al.
patent: 6288967 (2001-09-01), Fujisawa et al.
patent: 6380798 (2002-04-01), Mizuno et al.
patent: 6385118 (2002-05-01), Fujisawa et al.
patent: 6424585 (2002-07-01), Ooishi
patent: 6584031 (2003-06-01), Fujisawa et al.
patent: 6630857 (2003-10-01), Mizuno et al.
patent: 6674112 (2004-01-01), Tadaki et al.
patent: 2000-173296 (2000-06-01), None
Hamamoto Takeshi
Kawagoe Tomoya
Nguyen Viet Q.
Renesas Technology Corp.
LandOfFree
Semiconductor memory device reduced in power consumption... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device reduced in power consumption..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device reduced in power consumption... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3480350