Method of manufacturing a light emitting device

Details Method of manufacturing a light emitting device Method of manufacturing a light emitting device

2005-08-30

2005-08-30

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S798000, C438S099000

Reexamination Certificate

active

06936485

ABSTRACT:
To reduce the number of layers of an EL layer so that it can be manufactured at a reduced cost. An electrode (a) (102) and an EL layer (103) are formed on an insulator (101), and the EL layer (103) is subjected to plasma processing. A carrier injection region (104) is formed as a result in a superficial portion of the EL layer (103). An electrode (b) (105) is formed thereon to complete an EL element. The EL layer (103) is high in carrier injection efficiency despite being substantially a single layer.

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