Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-08-16
2005-08-16
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Reexamination Certificate
active
06930375
ABSTRACT:
The present invention is directed to a process for producing a silicon on insulator (SOI) structure having intrinsic gettering, wherein a silicon substrate is subjected to an ideal precipitating wafer heat treatment which enables the substrate, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process to form an ideal, non-uniform depth distribution of oxygen precipitates, and wherein a dielectric layer is formed beneath the surface of the wafer by implanting oxygen or nitrogen ions, or molecular oxygen, beneath the surface and annealing the wafer. Additionally, the silicon wafer may initially include an epitaxial layer, or an epitaxial layer may be deposited on the substrate during the process of the present invention.
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Falster Robert J.
Libbert Jeffrey L.
MEMC Electronic Materials , Inc.
Senniger Powers
Trinh (Vikki) Hoa B.
Weiss Howard
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