Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Reexamination Certificate
2005-06-07
2005-06-07
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
C117S004000, C117S903000, C117S904000, C117S905000
Reexamination Certificate
active
06902617
ABSTRACT:
A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimized.
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Hiteshew Felisa
Sulzer Markets and Technology AG
Townsend and Townsend / and Crew LLP
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