Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-11-29
2005-11-29
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S249000, C257S412000
Reexamination Certificate
active
06969870
ABSTRACT:
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.
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Japanese Patent Office Apr. 5, 2005 Notice of Reasons of Rejection for JP-2000-226559.
Kubo Hiroko
Yoneda Kenji
Abraham Fetsum
Matsushita Electric - Industrial Co., Ltd.
Studebaker Donald R.
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