Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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Details

C257S192000, C438S285000, C438S590000

Reexamination Certificate

active

06933544

ABSTRACT:
A power semiconductor device including a non-doped GaN channel layer, an n-type Al0.2Ga0.8N barrier layer formed on the channel layer, a p-type Al0.1Ga0.9N semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.

REFERENCES:
patent: 6100571 (2000-08-01), Mizuta et al.
patent: 6555851 (2003-04-01), Morizuka
patent: 5-21793 (1993-01-01), None
patent: 11-261053 (1999-09-01), None
patent: 2000-315804 (2000-11-01), None
patent: 2001-230263 (2001-08-01), None
patent: 3271613 (2002-01-01), None
patent: 2002-299625 (2002-10-01), None
Li, J., et al., “High breakdown voltage GaN HFET with field plate”, Electronics Letters, vol. 37, No. 3, Feb. 1, 2001, pp. 196-197.
Karmalkar, Shereepad, et al., “Resurf AlGaN/GaN HEMT for High Voltage Power Switching”, IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 373-375.
Simin, Grigory, et al., “SiO2/AlGaN/InGaN/GaN MOSDHFETS”, IEEE Electron Device Letters, vol. 23, No. 8, Aug. 20002, pp. 458-460.
Coffie, R., et al., p-Capped GaN-AlGaN-GaN High-Electron Mobility Transistors (HEMTs), IEEE Electron Device Letters, vol. 23, No. 10, Oct. 2002, pp. 588-590.

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