Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-08-23
2005-08-23
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C438S285000, C438S590000
Reexamination Certificate
active
06933544
ABSTRACT:
A power semiconductor device including a non-doped GaN channel layer, an n-type Al0.2Ga0.8N barrier layer formed on the channel layer, a p-type Al0.1Ga0.9N semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.
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Karmalkar, Shereepad, et al., “Resurf AlGaN/GaN HEMT for High Voltage Power Switching”, IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 373-375.
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Coffie, R., et al., p-Capped GaN-AlGaN-GaN High-Electron Mobility Transistors (HEMTs), IEEE Electron Device Letters, vol. 23, No. 10, Oct. 2002, pp. 588-590.
Ohashi Hiromichi
Omura Ichiro
Saito Wataru
Kabushiki Kaisha Toshiba
Lee Eddie
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Owens Douglas W.
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