Method of transferring a device, a method of producing a...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S458000, C438S464000

Reexamination Certificate

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06969624

ABSTRACT:
The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

REFERENCES:
patent: 5747217 (1998-05-01), Zaklika et al.
patent: 6757314 (2004-06-01), Kneissl et al.
patent: 6770337 (2004-08-01), Debe et al.
patent: 2002/0082543 (2002-06-01), Park et al.
patent: 2003/0017712 (2003-01-01), Brendel

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