Pore structure for programmable device

Details Pore structure for programmable device Pore structure for programmable device

2005-11-01

2005-11-01

Pert, Evan (Department: 2826)

Static information storage and retrieval

Format or disposition of elements

C365S148000

Reexamination Certificate

active

06961258

ABSTRACT:
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, the quantity of programmable material is minimized, and the programmable material that is reprogrammed from an amorphous to a crystalline state, and vice versa, is localized on a contact. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. A spacer is formed within the opening and a programmable material is formed within the opening such that the spacer reduces the programmable material on the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

REFERENCES:
patent: 6117720 (2000-09-01), Harshfield
Glenn Pure, “Micro Magic”, Aug. 1997, Sixteen Bits, pp. 10-16.
Maimon et al., “Chalcogenide-Based Non-Volatile Memory Technology”, Mar. 2001, IEEE Proceedings, 2001 Aerospace Conference, pp. 2289-2294.
S. Tyson et al., “Nonvolatile, High density High Performance Phase-Change Memory”, Mar. 2000, IEEE Proceedings, 2000 Aerospace Conference, vol. 5, pp. 385-390.

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