Static information storage and retrieval – Floating gate – Multiple values
Patent
1996-04-22
1998-01-27
Nelms, David C.
Static information storage and retrieval
Floating gate
Multiple values
36518512, 36518513, 3651852, 36518522, 36518525, 36518533, 36518909, 365195, G11C 1606
Patent
active
057128154
ABSTRACT:
An improved programming structure for performing a program operation in an array of multiple bits-per-cell flash EEPROM memory cells is provided. A memory core array (12) includes a plurality of memory cells and a reference cell array (22) having a plurality of reference core cells which are selected together with a selected memory core cell. A precharge circuit (36a) is used to precharge all of the array bit lines and the reference bit lines to a predetermined potential prior to a program operation. A reference generator circuit (134) is used for selectively generating one of a plurality of target memory core cell bit line program-verify voltages, each one corresponding to one of a plurality of programmable memory states. A switching circuit (P1,N1) is used to selectively connect a program current source to the selected certain ones of the columns of array bit lines containing the selected memory core cells which are to be programmed. A sensing logic circuit (26,27) continuously compares a potential on one of the selected bit lines and one of the plurality of target program-verify voltages. The sensing logic circuit generates a logic signal which is switched to a low logic level when the potential on the selected bit line falls below the selected one of the plurality of target program-verify voltages. The switching circuit is responsive to the low logic level for disconnecting the program current source so as to inhibit further programming of the selected memory core cells.
REFERENCES:
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5220531 (1993-06-01), Blyth et al.
patent: 5590076 (1996-12-01), Haddad et al.
Bill Colin S.
Haddad Sameer S.
Advanced Micro Devices , Inc.
Chin Davis
Nelms David C.
Tran Andrew Q.
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