Method for semiconductor filming

Coating processes – Coating by vapor – gas – or smoke

Patent

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Details

4272554, 4272551, 438770, C23C 1600, H01L 2131

Patent

active

057981418

ABSTRACT:
A method of semiconductor filming wherein a thin film is deposited on a wafer under an atmospheric pressure, which comprises the steps of simultaneously supplying a reactive gas and an inert gas to a reaction tube and maintaining a partial pressure of the reactive gas constant by adjusting the flow rates of those gases, whereby stability in film quality is improved.

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