High performance SCR-like BJT ESD protection structure

Details High performance SCR-like BJT ESD protection structure High performance SCR-like BJT ESD protection structure

2005-08-23

2005-08-23

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S107000, C257S918000, C257S553000, C257S658000, C257S577000, C257S355000, C257S173000, C257S567000, C257S592000, C257S362000, C257S110000, C257S343000

Reexamination Certificate

active

06933588

ABSTRACT:
In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adjacent the collector to define a SCR-like emitter and with a common contact with the collector of the BJT. The p+ region is spaced from the n-emitter of the transistor by a n-epitaxial region, and the collector is preferably spaced further from the n-emitter than is the case in a regular BJT.

REFERENCES:
patent: 5376231 (1994-12-01), Matsumoto et al.
patent: 6348724 (2002-02-01), Koomen et al.
patent: 6472286 (2002-10-01), Yu

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