Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2005-12-27
2005-12-27
Deb, Anjan (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S658000, C324S663000, C324S681000, C324S765010
Reexamination Certificate
active
06980009
ABSTRACT:
Disclosed is an on-chip test device for testing the thickness of gate oxides in transistors. A ring oscillator provides a ring oscillator output and an inverter receives the ring oscillator output as an input. The inverter is coupled to a gate oxide and the inverter receives different voltages as power supplies. The difference between the voltages provides a measurement of capacitance of the gate oxide. The difference between the voltages is less than or equal to approximately one-third of the difference between a second set of voltages provided to the ring oscillator. The capacitance of the gate oxide comprises the inverse of the frequency of the ring oscillator output multiplied by the difference between the voltages, less a capacitance constant for the test device. This capacitance constant is for the test device alone, and does not include any part of the capacitance of the gate oxide. The measurement of capacitance of the gate oxide is used to determine the thickness of the gate oxide.
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Maciejewski Edward P.
Nguyen Phung T.
Nowak Edward J.
Canale Anthony
Deb Anjan
International Business Machines - Corporation
Kramskaya M.
McGinn & Gibb PLLC
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