Stacked organic memory devices and methods of operating and...

Details Stacked organic memory devices and methods of operating and... Stacked organic memory devices and methods of operating and...

2005-12-27

2005-12-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S099000

Reexamination Certificate

active

06979837

ABSTRACT:
The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

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W. Blackley. International Search Report, PCT/US03/21679, mailed Feb. 18, 2004.

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