Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-10-18
2005-10-18
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S019000
Reexamination Certificate
active
06955718
ABSTRACT:
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.
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PCT International Search Report for PCT/US2004/020522 dated Dec. 14, 2004, 3 pages.
Falster Robert J.
Voronkov Vladimir V.
Hiteshew Felisa
MEMC Electronic Materials , Inc.
Senniger Powers
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