Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-02-15
2005-02-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S437000
Reexamination Certificate
active
06855615
ABSTRACT:
A trench is formed on a primary surface of a semiconductor substrate, and is filled with trench material to separate the surface region of the semiconductor substrate into plural active regions. At least a portion of the surface of the trench material adjoining the semiconductor substrate is depressed by a predetermined depth with reference to the primary surface of the semiconductor device. Thus, prevented is a decrease in a drain current of a semiconductor device having a trench isolation structure.
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Fourson George
McDermott Will & Emery LLP
Renesas Technology Corp.
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