Method for forming a semiconductor device having isolation...

Details Method for forming a semiconductor device having isolation... Method for forming a semiconductor device having isolation...

2005-11-15

2005-11-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C438S404000, C438S411000, C438S413000, C438S421000

Reexamination Certificate

active

06964911

ABSTRACT:
A method for forming a semiconductor device having isolation structures decreases leakage current. A channel isolation structure decreases leakage current through a channel structure. In addition, current electrode dielectric insulation structures are formed under current electrode regions to prevent leakage between the current electrodes.

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