Method and device for programming cells in a memory array in...

Details Method and device for programming cells in a memory array in... Method and device for programming cells in a memory array in...

2005-11-01

2005-11-01

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185220

Reexamination Certificate

active

06961267

ABSTRACT:
Accurately programming a memory cell. A voltage is applied to a drain of the memory cell to program the cell. After applying the voltage, the cell is verified as to whether it is programmed to a desired level. The magnitude of the programming voltage is increased and applied to the drain, and the memory cell is re-verified for the desired level. This is repeated until the memory cell is programmed to the desired level. Additional memory cells are programmed in this fashion in order to program multiple memory cells in a narrow distribution around the desired level. The programming can be done one memory cell at a time or many cells can be programmed in parallel. Further a ramped programming voltage can applied to the gate of the memory cell(s), such that the ramped voltage to the gate and the ramped voltage to the drain both program the memory cell.

REFERENCES:
patent: 6490204 (2002-12-01), Bloom et al.

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