Magnetoresistance effect element, its manufacturing method,...

Details Magnetoresistance effect element, its manufacturing method,... Magnetoresistance effect element, its manufacturing method,...

2005-08-30

2005-08-30

Bernatz, Kevin M. (Department: 1773)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200, C428S611000, C428S678000, C428S686000, C428S692100, C428S693100

Reexamination Certificate

active

06937447

ABSTRACT:
A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

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