MIS hydrogen sensors

Measuring and testing – Gas analysis – Detector detail

Reexamination Certificate

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Details

C073S024010, C073S024040, C073S024060, C073S031010, C073S031060

Reexamination Certificate

active

06935158

ABSTRACT:
Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

REFERENCES:
patent: 5698771 (1997-12-01), Shields et al.

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