Single transistor differential ROM

Static information storage and retrieval – Read only systems – Semiconductive

Reexamination Certificate

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C365S094000, C365S226000

Reexamination Certificate

active

06850427

ABSTRACT:
A single transistor memory storage element has a transistor contact connected to only one of two bitlines to program a logical value for the respective bit, pulling the connected bitline away from a bitline bias voltage and creating a voltage difference between the two bitlines. A differential sense amplifier may be employed to read the programmed bit value by sensing the magnitude or polarity of the voltage difference across the two bitlines. The read only memory is thus small, suitable for embedded read only memory, but may be read quickly.

REFERENCES:
patent: 6735109 (2004-05-01), Jo

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