Light-emitting element

Details Light-emitting element Light-emitting element

2005-11-15

2005-11-15

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S013000, C257S096000

Reexamination Certificate

active

06965126

ABSTRACT:
In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a substrate, a semiconductor layer of ZnxCd1−xSySe1−y(0≦x≦1, 0≦y≦1) which receives a part of blue light from the light-emitting layer to thereby emit yellow light, is interposed between the n-type Group III nitride compound semiconductor layer and the light-emitting layer.

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patent: 6040588 (2000-03-01), Koide et al.
patent: 6337536 (2002-01-01), Matsubara et al.
patent: 08-167737 (1996-06-01), None
patent: 10-022525 (1998-01-01), None
patent: 10-022527 (1998-01-01), None
patent: 2001-53336 (2001-02-01), None

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