Magnetic sensor integrated with CMOS

Details Magnetic sensor integrated with CMOS Magnetic sensor integrated with CMOS

2005-06-07

2005-06-07

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S108000, C257S206000, C257S207000, C257S208000, C257S210000, C257S252000, C257S347000, C257S401000, C257S421000, C257S422000, C257S423000, C257S424000, C257S425000, C257S426000, C257S427000

Reexamination Certificate

active

06903429

ABSTRACT:
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third terminal, each of which is located between two adjacent gated regions other than the two innermost gated regions, output positive and negative Hall voltages. By appropriately controlling a bias voltage to the gated regions, small changes in a magnetic field induces larger currents in channel regions under the gated regions, which, in turn, results in detectable Hall voltages.

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