Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-08-09
2005-08-09
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
Reexamination Certificate
active
06927411
ABSTRACT:
A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
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patent: 2002/0000034 (2002-01-01), Jenson
patent: 2004/0124407 (2004-07-01), Kozicki et al.
patent: WO 99/28914 (1999-06-01), None
patent: WO 00/48196 (2000-08-01), None
patent: WO 02/21542 (2002-03-01), None
Axon Technologies Corporation
Fourson George
Kebede Brook
Snell & Wilmer L.L.P.
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