Semiconductor memory device having self-precharge function

Details Semiconductor memory device having self-precharge function Semiconductor memory device having self-precharge function

2005-08-16

2005-08-16

Lam, David (Department: 2827)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S203000, C365S205000

Reexamination Certificate

active

06930950

ABSTRACT:
An XOR gate receives an input from a pair of read data lines to output a self-precharge signal when there is an increased potential difference between the paired read data lines. Thus, immediately after the increased potential difference between the paired read data lines occurs upon issuance of a read command, a precharge operation is autonomically performed. Therefore, no external precharge command is necessary when the read command is issued and thus a higher-speed operation is easily achieved.

REFERENCES:
patent: 6246620 (2001-06-01), Fujioka et al.
patent: 2001/0021140 (2001-09-01), Fujioka et al.
patent: P2000-207883 (2000-07-01), None
patent: P2001-210077 (2001-08-01), None
patent: P2002-15570 (2002-01-01), None
U.S. Appl. No. 10/325,827, Kinoshita.
U.S. Appl. No. 10/392,842, Taito.
U.S. Appl. No. 10/222,840, Fujino.

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