Semiconductor laser apparatus

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S043010, C372S044010, C372S045013, C372S046012

Reexamination Certificate

active

06967983

ABSTRACT:
A device structure whereby an excellent tunable laser does not require a highly complicated wavelength control circuit, and delivers a high output, and excels in wavelength stability; and a structure of an optical module incorporating the laser; and a method for manufacturing the laser and the optical module. The wavelength of the laser is varied continuously with the single electric signal in the tunable wavelength range by setting the laser resonator length, the electric driving conditions of the laser at the time of tuning the wavelength, and the operating temperature to be in appropriate ranges, respectively. The device structure whereby improved laser gain, decreased electric resistance, and reduced heat resistance is attained by setting the waveguide width, particularly at part of or all parts of the laser resonator waveguide, to a wide width that allows multiple transverse modes to be sustained and setting both the width and the laser resonator length to appropriate values, respectively. By employing a self-image-formation effect resulting from the multi-mode interference effect, mode conversion loss in the laser resonator is reduced and, connection with an optical fiber is facilitated because the light intensity distribution at an emitting facet of the laser becomes a single-peaked lowest-order mode.

REFERENCES:
patent: 2002/0028390 (2002-03-01), Mazed
patent: 2004/0125846 (2004-07-01), Zediker et al.
Koji Kudo, Kenichiro Yashiki, Tatusya Sasaki, Yoshitaka Yokoyama, Kiichi Hamamoto, Takao Morimoto, and Masayuki Yamaguchi, “1.55-μm Wavelength-Selectable Microarray DFB-LD's with Monolithically Integrated MMI Combiner, SOA, and EA-Modulator”, IEEE Photonics Technology Letters, vol. 12, No. 3, Mar. 2000, pp. 242-244.
G.P. Agrawal et al., “Long-Wavelength Semiconductor Lasers, Chapter 7 -Distributed-Feedback Semiconductor Lasers” Van Nostrand Reinhold Company, N.Y., 1986, pp 287-289.
Sacher Lasertechnik Group “DFB/DBR Diode Lasers, Single Mode” http://www.sacher-laser.com/DFBinfo.php, pp. 1-2.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor laser apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3465662

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.