Semiconductor circuit and method of fabricating the same

Details Semiconductor circuit and method of fabricating the same Semiconductor circuit and method of fabricating the same

2005-08-16

2005-08-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S055000, C257S056000, C257S057000, C257S058000, C257S060000, C257S061000, C257S062000, C257S063000, C257S064000, C257S065000, C257S066000, C257S067000, C257S347000, C438S149000, C438S150000, C438S479000, C438S482000, C438S483000, C438S489000, C438S485000, C438S486000

Reexamination Certificate

active

06930326

ABSTRACT:
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can be provided, and a semiconductor integrated circuit having high conformance can be provided. The invention is characterized in that, in a part or whole of thin film transistors which configure an analog circuit such as a current mirror circuit, a differential amplifier circuit, or an operational amplifier, in which high conformance is required for semiconductor devices included therein, channel forming regions have crystalline semiconductor films on the same line. High conformance can be expected for an analog circuit which has the crystalline semiconductor films on the same line formed using the invention as the channel forming regions of the thin film transistors. That is, the invention is characterized in that, among the thin film transistors which configures the analog circuit, the channel forming regions of the thin film transistors having at least the same polarity are formed on the same line.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 5097297 (1992-03-01), Nakazawa
patent: 5163220 (1992-11-01), Zeto et al.
patent: 5432122 (1995-07-01), Chae
patent: 5636042 (1997-06-01), Nakamura et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5747828 (1998-05-01), Hata et al.
patent: 5828082 (1998-10-01), Wu
patent: 5841097 (1998-11-01), Esaka et al.
patent: 5847780 (1998-12-01), Kim et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 5981974 (1999-11-01), Makita
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 6204520 (2001-03-01), Ha et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6274414 (2001-08-01), Ogata et al.
patent: 6291320 (2001-09-01), Yamazaki et al.
patent: 6294815 (2001-09-01), Yamazaki et al.
patent: 6300175 (2001-10-01), Moon
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6323072 (2001-11-01), Yamazaki et al.
patent: 6326249 (2001-12-01), Yamazaki et al.
patent: 6355940 (2002-03-01), Koga et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6380560 (2002-04-01), Yamazaki et al.
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6424331 (2002-07-01), Ozawa
patent: 6429100 (2002-08-01), Yoneda
patent: 6433842 (2002-08-01), Kaneko et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6512246 (2003-01-01), Tanabe
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6583440 (2003-06-01), Yasukawa
patent: 6632696 (2003-10-01), Kimura et al.
patent: 2001/0035526 (2001-11-01), Yamazaki et al.
patent: 2002/0004292 (2002-01-01), Yamazaki et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2002/0075208 (2002-06-01), Bae et al.
patent: 2002/0098628 (2002-07-01), Hamada et al.
patent: 2002/0134981 (2002-09-01), Nakamura et al.
patent: 2003/0001800 (2003-01-01), Nakajima et al.
patent: 2003/0128200 (2003-07-01), Yumoto
patent: 2003/0141505 (2003-07-01), Isobe et al.
patent: 2003/0141521 (2003-07-01), Isobe et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183854 (2003-10-01), Kato et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0209710 (2003-11-01), Yamazaki et al.
patent: 2003/0218169 (2003-11-01), Isobe et al.
patent: 2003/0218170 (2003-11-01), Yamazaki et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 2003/0218177 (2003-11-01), Yamazaki
patent: 2003/0219935 (2003-11-01), Miyairi et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: 2004/0016958 (2004-01-01), Kato et al.
patent: 2004/0016967 (2004-01-01), Yamazaki et al.
patent: 2004/0026696 (2004-02-01), Yamazaki et al.
patent: 2004/0072411 (2004-04-01), Azami et al.
patent: 1 049 144 (2002-11-01), None
patent: 62-104117 (1987-05-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-070129 (1996-03-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-084418 (1999-03-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-068520 (2000-03-01), None
patent: 2000-349296 (2000-12-01), None
patent: 2001-011085 (2001-01-01), None
patent: 2001-144027 (2001-05-01), None
patent: 2002-014337 (2002-01-01), None
patent: 2002-313811 (2002-10-01), None
patent: 2002-324808 (2002-11-01), None
M.W. Geis, et al.,Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization, 1979 American Institute of Physics, Appl. Phys. Lett. 35(1), Jul. 1, 1979, pp. 71-74.
M.W. Geis, et al.,Crystalline Silicon on Insulators by Graphoepitaxy, IEEE 1979, pp. 210-212.
A. Hara et al.,Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization, AM-LCD, Jan. 1, 2001, pp. 227-230.
H. Smith et al.,Oriented Crystal Growth on Amorphous Substrates Using Artificial Surface-Relief Gratings, Appl. Phys. Lett., vol. 32, No. 6, Mar. 15, 1978, pp. 349-350.
D.K. Biegelsen et al.,Laser-Induced Crystallization of Silicon Islands on Amorphous Substrates: Multilayer Structures, Appl. Phys. Lett., vol. 38, No. 3, Feb. 1, 1981, pp. 150-152.
M.A. Baldo et al.,Very High-Efficiency Green Organic Light-Emitting Devices Based on Electrophosphorescence, Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
H.W. Lam,Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate, IEEE Electron Device Letters, vol. EDL-1, No. 10, Oct., 1980, pp. 206-208.
M.W. Geis et al.,Grapho-Epitaxy of Silicon on Fused Silica Using Surface Micropatterns and Laser Crystallization, J. Vac. Sci. Technol., vol. 16, No. 6, Nov./Dec., 1979, pp. 1640-1643.
T. Tsutsui et al.,High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center, Jpn. J. Appl. Phys., vol. 38, Part 2, No. 12B, Dec. 15, 1999, pp. L1502-L1504.
M.A. Baldo,Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices, Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
T. Tsutsui et al.,Electroluminescence in Organic Thin Films, Photochemical Processes in Organized Molecular Systems, Proceedings of the Memorial Conference for the late Professor Shigeo Tazuke, Sep. 22-24, 1990, pp. 437-450.
M. Kishino et al.,Physics of VLSI Device, Maruzen Co., Ltd., 1995, pp. 144-146.

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