Programming flash memories

Details Programming flash memories Programming flash memories

2005-08-02

2005-08-02

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S226000

Reexamination Certificate

active

06925011

ABSTRACT:
A method for programming a memory cell is provided that includes detecting a program command at the memory device and detecting an external voltage applied to the memory device that exceeds a predetermined value. The method includes, in response to the program command and the detected external voltage, applying an internally generated programming voltage to a control gate of the memory cell. Applying a voltage pulse to a drain of the memory cell while the control gate is at the internally generated programming voltage is also included in the method.

REFERENCES:
patent: 5764571 (1998-06-01), Banks
patent: 5991221 (1999-11-01), Ishikawa et al.
patent: 6288419 (2001-09-01), Prall et al.
patent: 2002/0126537 (2002-09-01), Kreifels et al.

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