Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-06-07
2005-06-07
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000
Reexamination Certificate
active
06903383
ABSTRACT:
A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple δ-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple δ-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple δ-doped InAlAs layer (204) as a carrier supplying layer is reduced.
REFERENCES:
patent: 4780748 (1988-10-01), Cunningham et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 5488237 (1996-01-01), Kuwata
patent: 0 555 886 (1993-08-01), None
patent: 0 780 906 (1997-06-01), None
patent: 0841704 (1998-05-01), None
patent: 61-174775 (1986-08-01), None
patent: 62-035678 (1987-02-01), None
patent: 63-1046 (1988-01-01), None
patent: 5-13446 (1993-01-01), None
patent: 5-226374 (1993-09-01), None
patent: 2000-6210 (2000-01-01), None
patent: 2000-58964 (2000-02-01), None
patent: 2000-269481 (2000-09-01), None
patent: WO00/59162 (2000-05-01), None
Xu D. et al., “Design and Fabrication of Double Modulation Doped Inalas/Ingaas/Inas Heterojunction FET's for High-Speed and Millimeter-Wave Applications”, IEEE Transations on Electron Devices, IEEE Inc. New York, US, vol. 45, No. 1, 1998, pp. 21-30, XP000787870.
Shieh H.M. et al., “Improved GAAS/INO.25GAO.75AS/GAAS Pseudomorphic Heterostructure by Growing Double &-Doping GAAS Layers on both Sides of the Channel”, Solid State Electronics, Elsevier Science Publishers, Barking, GB, vol. 36, No. 9, Sep. 1, 1993, pp. 1235-1237, XP000384258.
Ming-Jer Kao et al., “Improved Selectively-Doped GAAS/INGAAS Double-Quantum-Well Pseudomorphic HFET'S Utilizing a Buried P-Layer on the Buffer”, Japanese Journal of Applied Physics, Tokyo, JP, vol. 32, No. 10B, Oct. 15, 1993, pp. L1503-1505, XP000483951.
Walker, John L. B., ed. “High-Power GaAs FET Amplifiers” (1993).
Daisuke Ueda et al., “Radio-Frequency and Optical Semiconductor Devices Exploring New Age of Data Communication”, IEICE, p. 124, Dec. 1, 1999.
F. Berizzi, et al., “HOS Based Algorithm for Autofocusing of Spotlight SAR Images”, Electronics Letters, vol. 33, No. 7, Mar. 27, 1997.
Deguchi Masahiro
Furuya Hiroyuki
Suzuki Asamira
Yokogawa Toshiya
Yoshii Shigeo
Lewis Monica
Wilczewski Mary
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