Semiconductor memory device with series-connected...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S552000

Reexamination Certificate

active

06858916

ABSTRACT:
A semiconductor memory device comprises memory cells in rows and columns. Each memory is of the capacitor type and includes one portion of a dielectric layer. Antifuse-components are connected in series one after another between a power source electrode and an output terminal that is grounded when a MOS transistor is conductive.

REFERENCES:
patent: 5412261 (1995-05-01), Whitten
patent: 6584029 (2003-06-01), Tran et al.
patent: 8-316324 (1996-11-01), None
patent: 11-191614 (1999-07-01), None
patent: 11-328991 (1999-11-01), None
patent: 2000-123592 (2000-04-01), None
patent: 2001-28397 (2001-01-01), None

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