Method of removing metal etching residues following a metal...

Details Method of removing metal etching residues following a metal... Method of removing metal etching residues following a metal...

2005-08-30

2005-08-30

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S697000, C438S706000, C134S001200

Reexamination Certificate

active

06936544

ABSTRACT:
A method for reducing wafer surface scratching in a metal CMP process including providing a semiconductor wafer having a process surface comprising a blanket deposited metal layer; dry etching in an etchback process comprising a fluorine containing etching chemistry to remove at least a portion of the metal layer forming a metal and fluorine containing etching residue at the process surface; cleaning the process surface with a hydrofluoric acid (HF) containing cleaning solution; and carrying out a subsequent metal chemical mechanical polishing (CMP) process.

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patent: 6214688 (2001-04-01), Hwang et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 6780785 (2004-08-01), Hsieh

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