Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-08-23
2005-08-23
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S459000, C438S464000, C438S033000
Reexamination Certificate
active
06933160
ABSTRACT:
Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used to form a multi-layer epitaxial structure and the substrate and the multi-layer epitaxial structure are separated at the mask. After the multi-layer epitaxial structure is extracted, a metal reflector may be disposed thereunder. Next, a conductive substrate is bonded to the metal reflector. Next, an upper surface of the multi-layer structure is disposed with a p-electrode and a bottom side of the conductive substrate with an n-electrode whereby an vertical LED structure is formed.
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Mulpuri Savitri
Supernova Optoelectronics Corp.
Troxell Law Office PLLC
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