Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-11-15
2005-11-15
Schillinger, Laura (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S096000, C257S101000
Reexamination Certificate
active
06965124
ABSTRACT:
A light-emitting device having a structure in which a mask used for forming a film such as an organic compound layer does not come in contact with the pixels in forming the light-emitting elements, and a method of fabricating the same. In fabricating the light-emitting device of the active matrix type, a partitioning wall constituted by a second wiring and a separation portion is formed on the interlayer-insulating film, and the pixels are surrounded by the partitioning wall, preventing the mask from coming into direct contact with the pixels, the mask being used for forming the organic compound layer and the opposing electrode of the light-emitting elements.
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English abstract re JP 11-339968, published Dec. 10, 1999.
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Schillinger Laura
Semiconductor Energy Laboratory Co,. Ltd.
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